Interconnect Structure Having a Carbon-Containing Barrier Layer

ABSTRACT

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a conductive plug over a substrate; a conductive feature over the conductive plug, wherein the conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a bottom surface; and a carbon-containing barrier layer having a first portion along the first sidewall of the conductive feature, a second portion along the second sidewall of the conductive feature, and a third portion along the bottom surface of the conductive feature.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. application Ser. No.17/000,430, filed on Aug. 24 2020, entitled “Interconnect StructureHaving a Carbon-Containing Barrier Layer”, which is a continuation ofU.S. application Ser. No. 16/734,933, filed on Jan. 6, 2020, entitled“Interconnect Structure Having a Carbon-Containing Barrier Layer”, nowU.S. Pat. No. 10,867,800 issued Dec. 15, 2020, which is a continuationof U.S. application Ser. No. 16/429,179, filed on Jun. 3, 2019, entitled“Interconnect Structure Having a Carbon-Containing Barrier Layer”, nowU.S. Pat. No. 10,529,575 issued Jan. 7, 2020, which is a continuation ofU.S. application Ser. No. 16/049,912, filed on Jul. 31, 2018, entitled“Method of Forming an Interconnect Structure”, now U.S. Pat. No.10,312,098 issued Jun. 4, 2019, which is a divisional of U.S.application Ser. No. 14/175,685, filed on Feb. 7, 2014, entitled“Interconnect Structure Including a Conductive Feature and a BarrierLayer on Sidewalls and a Bottom Surface of the Conductive Feature andMethod of Forming the Same”, now U.S. Pat. No. 10,163,644 issued Dec.25, 2018, each application is hereby incorporated herein by reference.

BACKGROUND

The fabrication of integrated chips can be broadly separated into twomain sections, front-end-of-the-line (FEOL) fabrication andback-end-of-the-line (BEOL) fabrication. FEOL fabrication includes theformation of devices (e.g., transistors, capacitors, resistors, etc.)within a semiconductor substrate. BEOL fabrication includes theformation of one or more metal interconnect layers comprised within oneor more insulating dielectric layers disposed above the semiconductorsubstrate. The metal interconnect layers of the BEOL electricallyconnect individual devices of the FEOL to external pins of an integratedchip.

As the size of a semiconductor device size decreases, there is a trendtowards thinner films being used for the diffusion barrier layer.Physical vapor deposition (PVD) process used for depositing a thinnerbarrier layer encounters difficulties in advanced scale ofinterconnection. Accordingly, a need has developed in the art for animproved method of forming an interconnect structure for an integratedchip.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale and are used forillustration purposes only. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of an interconnect structure 100according to various aspects of the present disclosure.

FIG. 2 is a cross-sectional view of an interconnect structure 200according to various aspects of the present disclosure.

FIG. 3 is a flowchart of a method 300 of forming the interconnectstructure 100 according to various aspects of the present disclosure.

FIGS. 4-10 are cross-sectional views of the interconnect structure 100at various stages of fabrication according to various aspects of thepresent disclosure.

DETAILED DESCRIPTION

The present disclosure relates generally to semiconductor structures,and more particularly, to methods of forming an interconnect structure.

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of variousembodiments. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature “over” or “on” a secondfeature in the description that follows may include embodiments in whichthe first and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formed betweenthe first and second features, such that the first and second featuresmay not be in direct contact. In addition, the present disclosure mayrepeat reference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “under”,“lower”, “above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as being “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the exemplary term “below” can encompass both an orientation ofabove and below. The apparatus may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

The claimed subject matter is now described with reference to thedrawings, wherein like reference numerals are generally used to refer tolike elements throughout. In the following description, for purposes ofexplanation, numerous specific details are set forth in order to providea thorough understanding of the claimed subject matter. It is evident,however, that the claimed subject matter may be practiced without thesespecific details. In other instances, structures and devices areillustrated in block diagram form in order to facilitate describing theclaimed subject matter. It will be appreciated that ‘layer’, as usedherein, contemplates a region, and does not necessarily comprise auniform thickness. For example, a layer is a region, such as an areacomprising arbitrary boundaries. For another example, a layer is aregion comprising at least some variation in thickness.

FIG. 1 is a cross-sectional view of an interconnect structure 100according to various aspects of the present disclosure. As depicted inFIG. 1, the interconnect structure 100 comprises a conductive plug 130over a substrate 110; a conductive feature 170 over the conductive plug130, wherein the conductive feature 170 has a first sidewall 170 a, asecond sidewall 170 b facing the first sidewall 170 a, and a bottomsurface 170 c; and a carbon-containing barrier layer 180 having a firstportion 180 a along the first sidewall 170 a of the conductive feature170, a second portion 180 b along the second sidewall 170 b of theconductive feature 170, and a third portion 180 c along the bottomsurface 170 c of the conductive feature 170. The interconnect structure100 may further comprise a lower dielectric layer 120 over the substrate110, an upper dielectric layer 190 over the lower dielectric layer 120,and an etch stop layer (ESL) 160 between the lower dielectric layer 120and the upper dielectric layer 190. One skilled in the art willrecognize that first sidewall 170 a and second sidewall 170 b areartifacts of the cross-sectional view of the figures. In an actualdevice, first sidewall 170 a and second sidewall 170 b are actuallyopposing portions of a single sidewall defined by a three-dimensionaldevice.

The substrate 110 may be a semiconductor substrate that includes anelementary semiconductor including silicon and/or germanium; a compoundsemiconductor including silicon carbide, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide;an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP; or combinations thereof. The alloy semiconductorsubstrate may have a gradient SiGe feature in which the Si and Gecomposition change from one ratio at one location to another ratio atanother location of the gradient SiGe feature. The alloy SiGe may beformed over a silicon substrate. The SiGe substrate may be strained.Furthermore, the substrate 110 may be a semiconductor on insulator(SOI). In some examples, the substrate 110 may include a doped epilayer. In other examples, the substrate 110 may include a multilayercompound semiconductor structure. Alternatively, the substrate 110 mayinclude a non-semiconductor material, such as a glass, fused quartz, orcalcium fluoride. In some embodiments, the substrate 110 includes adielectric layer. In some embodiments, the substrate 110 includes a gateelectrode.

In some embodiments, the conductive plug 130 comprises tungsten (W). Theconductive plug 130 may be surrounded by a plug barrier layer 150. Theplug barrier layer 150 comprises titanium (Ti) or titanium nitride(TiN). In some embodiments, the conductive feature 170 comprises copper(Cu), aluminum (Al), silver (Ag), gold (Au), or alloys thereof. Theconductive feature 170 may also comprise one or more cap layers (notshown) having a composition of the formula MxOyNz, where M is a metal, Ois oxygen, and N is nitrogen. Generally, the metal is selected from thegroup consisting of aluminum (Al), manganese (Mn), cobalt (Co), titanium(Ti), tantalum (Ta), tungsten (W), nickel (Ni), tin (Sn), magnesium(Mg), and combinations thereof. The conductive plug 130 or theconductive feature 170 may be formed by a process including, but notlimited to, atomic layer deposition (ALD), chemical vapor deposition(CVD), physical vapor deposition (PVD), sputtering, plating, orcombinations thereof.

In some embodiments, the carbon-containing barrier layer 180 is formedby ALD, CVD, or combinations thereof. In some embodiments, thecarbon-containing barrier layer 180 comprises a metal or a metalnitride. For example, the metal or the metal nitride comprises one ormore metal elements selected from tantalum (Ta), titanium (Ti),manganese (Mn), ruthenium (Ru), cobalt (Co), chromium (Cr), aluminum(Al), zirconium (Zr), hafnium (Hf), tin (Sn), molybdenum (Mo), orpalladium (Pd). In some embodiments, the carbon-containing barrier layer180 comprises tantalum nitride (TaN), and an atomic ratio of N dividedby Ta is from about 2.3 to about 2.6. When the ratio is lower than 2.3,adhesion of TaN to the upper dielectric layer 190 or the lowerdielectric layer 120 will degrade. When the ratio is higher 2.6,adhesion of TaN to the conductive feature 170 will degrade. In someembodiments, the precursors used in ALD or CVD to form thecarbon-containing barrier layer 180 contain carbon impurities. Forexample, the precursors may include(tert-amylimido)tris(dimethylamido)tantalum (“TAIMATA”),(tert-butylimido)tris(ethylmethylamido)tantalum (“TBTEMT”),tris(diethylamino)(tert-butylimido)tantalum (“TBTDMT”),pentakis(dimethylamino)tantalum(“PDMAT”),tetrakis(dimethylamino)titanium (“TDMAT”),bis(ethylcyclopentadienyl)Ruthenium (“Ru(EtCp)2”),cyclopentadienyl-propylcyclopentadienylruthenium(“RuCp(i-PrCp)”),bis(methylcyclopentadienyl)ruthenium (“Ru(MeCp)₂”),tris(acetylacetonate)ruthenium (“Ru(acac)₃”), trirutheniumdodecacarbonyl (“Ru₃(CO)₁₂”), cobalt dicarbonyl cyclopentadiene(“CpCo(CO)₂”), or dicobalt hexacarbonyl tert-butylacetylene (“CCTBA”).The carbon-containing barrier layer 180 has a carbon concentration of atleast about 0.1 atomic percent (at %). The carbon impurities can helpadhesion of the carbon-containing barrier layer 180 to the upperdielectric layer 190 or the lower dielectric layer 120. In addition, thecarbon impurities can help prevent a conductive material in theconductive feature 170 from diffusing into the upper dielectric layer190 or the lower dielectric layer 120. In some embodiments, thecarbon-containing barrier layer 180 has a carbon concentration fromabout 0.1 at % to about 5 at %. For example, the carbon concentration isfrom 0.2 at % to 1 at %. If the carbon concentration is higher than 5 at%, it may cause the “effective” k value of the upper dielectric layer190 or the lower dielectric layer 120 become higher than expected.

As depicted above, in some embodiments, the carbon-containing barrierlayer 180 is formed by ALD, CVD, or combinations thereof. The depositionuniformity is well controlled. In some embodiments, a ratio of athickness of the first portion 180 a or the second portion 180 b dividedby a thickness of the third portion 180 c is from about 0.9 to about1.1. As mentioned above, the carbon-containing barrier layer 180 isformed by ALD, CVD, or combinations thereof. Because the depositionuniformity is good for ALD or CVD, the ratio of the sidewall thicknessdivided by the bottom thickness of the carbon-containing barrier layer180 can be maintained from 90% to 110%. For example, the ratio is 0.95.In some embodiments, the thickness of the first portion 180 a or thesecond portion 180 b is in a range from about 4.5 angstroms (Å) to about55 angstroms (Å). In some embodiments, the thickness of the thirdportion 180 c is in a range from about 5 angstroms (Å) to about 50angstroms (Å). In some embodiments, the conductive plug 130 comprises avoid 140, and the carbon-containing barrier layer 180 further comprisesa fourth portion 180 d surrounding and sealing the void 140.

As depicted above, in some embodiments, the interconnect structure 100further comprises the lower dielectric layer 120 over the substrate 110,the upper dielectric layer 190 over the lower dielectric layer 120, andthe ESL 160 between the lower dielectric layer 120 and the upperdielectric layer 190. A dielectric material of the lower dielectriclayer 120 or the upper dielectric layer 190 comprises an oxide, SiO₂,SiOCH, borophosphosilicate glass (BPSG), TEOS, spin-on glass (SOG),undoped silicate glass (USG), fluorinated silicate glass (FSG),high-density plasma (HDP) oxide, plasma-enhanced TEOS (PETEOS),fluorine-doped silicon oxide, carbon-doped silicon oxide, porous siliconoxide, porous carbon-doped silicon oxide, organic polymers, orsilicone-based polymers. The dielectric material is associated with adielectric constant (k) less than 3.9. In some embodiments, k is betweenabout 1.5 and about 2.8. The lower dielectric layer 120 or the upperdielectric layer 190 may be formed by ALD, CVD, PVD, or combinationsthereof.

The ESL 160 is extended through by the conductive structure 170. Thematerial for the ESL 160 includes SiO, SiC, SiN, SiOC, SiON, SiCN, TiN,MN, AlON, TEOS, hard black diamond (HBD), or the like. Alternatively,the ESL 160 may be formed by depositing and annealing a metal oxidematerial, which includes Hf, HfO₂, or Al. The ESL 160 may be formedusing a suitable process such as ALD, CVD, PVD, molecular beam epitaxy(MBE), spin-on, or combinations thereof. In some embodiments, the ESL160 has a thickness in a range from about 10 Å to about 300 Å.

The interconnect structures of the present disclosure are not limited tothe above-mentioned embodiments, and may have other differentembodiments. To simplify the description and for the convenience ofcomparison between each of the embodiments of the present disclosure,corresponding components in each of the following embodiments are markedwith the same numerals. For making it easier to compare the differencebetween the embodiments, the following description will detail thedissimilarities among different embodiments and the identical featureswill not be redundantly described.

FIG. 2 is a cross-sectional view of an interconnect structure 200according to various aspects of the present disclosure. As depicted inFIG. 2, the interconnect structure 200 comprises a tungsten (W) plug 230having a seam 240 over a substrate 110; a copper (Cu) line 270 over theW plug 230, wherein the Cu line 270 has a first sidewall 270 a, a secondsidewall 270 b facing the first sidewall 270 a, and a bottom surface 270c; and a carbon-containing barrier layer 180 having a first portion 180a along the first sidewall 270 a of the Cu line 270, a second portion180 b along the second sidewall 270 b of the Cu line 270, a thirdportion 180 c along the bottom surface 270 c of the Cu line 270, and afourth portion 180 d surrounding and sealing the seam 240, wherein thecarbon-containing barrier layer 180 has a carbon concentration of atleast about 0.1 atomic percent (at %). The interconnect structure 200may further comprise a lower dielectric layer 120 over the substrate110, an upper dielectric layer 190 over the lower dielectric layer 120,and an etch stop layer (ESL) 160 between the lower dielectric layer 120and the upper dielectric layer 190.

The Cu line 270 may also comprise one or more cap layers (not shown)having a composition of the formula MxOyNz, where M is a metal, O isoxygen, and N is nitrogen. Generally, the metal is selected from thegroup consisting of Al, Mn, Co, Ti, Ta, W, Ni, Sn, Mg, and combinationsthereof. The W plug 230 or the Cu line 270 may be formed by a processincluding, but not limited to, ALD, CVD, PVD, sputtering, plating, orcombinations thereof. In some embodiments, the carbon-containing barrierlayer 180 further comprises a fourth portion 180 d surrounding andsealing the seam 240.

FIG. 3 is a flowchart of a method 300 of forming the interconnectstructure 100 according to various aspects of the present disclosure. Itis understood that additional steps can be provided before, during, andafter the method 300, and some of the steps described can be replaced oreliminated for other embodiments of the method 300. The method 300begins at step 310 in which a lower dielectric layer 120 is depositedover a substrate 110. The method 300 continues with step 320 in which aplug hole 122 is formed in the lower dielectric layer 120. The method300 continues with step 330 in which a conductive plug 130 is formed inthe plug hole 122. The method 300 continues with step 340 in which anupper dielectric layer 190 is deposited over the lower dielectric layer120. The method 300 continues with step 350 in which a trench 192 isformed in the upper dielectric layer 190 and the lower dielectric layer120 over the conductive plug 130. The method 300 continues with step 360in which a carbon-containing barrier layer 180 is formed along innersurfaces of the trench 192. The method 300 continues with step 370 inwhich a conductive feature 170 is formed in the trench 192. An etch stoplayer (ESL) 160 may be further formed between the lower dielectric layer120 and the upper dielectric layer 190. The discussion that followsillustrates embodiments of the interconnect structure 100 that can befabricated according to the method 300 of FIG. 3.

FIGS. 4-10 are cross-sectional views of the interconnect structure 100at various stages of fabrication according to various aspects of thepresent disclosure. As depicted in FIG. 4 and step 310 in FIG. 3, themethod 300 begins at step 310 by depositing a lower dielectric layer 120over a substrate 110. As depicted in FIG. 5 and step 320 in FIG. 3, themethod 300 continues with step 320 by forming a plug hole 122 in thelower dielectric layer 120. Step 320 may comprise using an etch process.For example, step 320 is performed by an anisotropic etch process (e.g.,dry etching).

As depicted in FIG. 6, FIG. 7, and step 330 in FIG. 3, the method 300continues with step 330 by forming a conductive plug 130 in the plughole 122. In some embodiments, a void 140 is formed in the conductiveplug 130. Step 330 comprises: forming a conductive film 125 in the plughole 122; and performing chemical-mechanical planarization (CMP) on atleast one of the lower dielectric layers 120 or the conductive film 125.The conductive film 125 may be formed by a process including, but notlimited to, ALD, CVD, PVD, sputtering, plating, or combinations thereof.In some embodiments, the conductive film 125 comprises W. In someembodiments, step 330 further comprises forming a plug barrier layer 150in the plug hole 122 before the forming the conductive film 125. Theplug barrier layer 150 comprises Ti or TiN.

As depicted in FIG. 8 and step 340 in FIG. 3, the method 300 continueswith step 340 by depositing an upper dielectric layer 190 over the lowerdielectric layer 120. The lower dielectric layer 120 or the upperdielectric layer 190 may be formed by ALD, CVD, PVD, or combinationsthereof. A dielectric material of the lower dielectric layer 120 or theupper dielectric layer 190 comprises an oxide, SiO₂, SiOCH, BPSG, TEOS,SOG, USG, FSG, HDP oxide, PETEOS, fluorine-doped silicon oxide,carbon-doped silicon oxide, porous silicon oxide, porous carbon-dopedsilicon oxide, organic polymers, or silicone-based polymers. Thedielectric material is associated with a dielectric constant (k) lessthan 3.9. For example, k is between about 1.5 and about 2.8.

As depicted in FIG. 9 and step 350 in FIG. 3, the method 300 continueswith step 350 by forming a trench 192 in the upper dielectric layer 190and the lower dielectric layer 120 over the conductive plug 130. Step350 may comprise using an etch process. For example, step 350 isperformed by an anisotropic etch process (e.g., dry etching). In someembodiments, step 350 further comprises exposing an upper portion of thevoid 140.

The process steps up to this point have provided the interconnectstructure 100 having the trench 192 over the conductive plug 130.Conventionally, a barrier layer would be formed along inner surfaces ofthe trench 192 using PVD or sputtering. However, when a conductivematerial such as Cu is formed over the barrier layer later on, theconductive material may still diffuse into the conductive plug 130especially into the void 140, thereby degrading the device performance.

Accordingly, the processing discussed below with reference to FIG. 10may form a novel barrier layer along inner surfaces of the trench 192 toimpede diffusion of the conductive material into the conductive plug130. Problems associated with low yield and bad reliability may bereduced and/or avoided. Thus, Applicant's method may achieve the desireddevice performance characteristics.

As depicted in FIG. 10 and step 360 in FIG. 3, the method 300 continueswith step 360 by forming a carbon-containing barrier layer 180 alonginner surfaces of the trench 192. In some embodiments, step 360 furthercomprises forming the carbon-containing barrier layer 180 along innersurfaces of the void 140 and sealing the upper portion of the void 140.In some embodiments, step 360 is performed by ALD, CVD, or combinationsthereof. In some embodiments, the carbon-containing barrier layer 180comprises a metal or a metal nitride. For example, the metal or themetal nitride comprises one or more metal elements selected from Ta, Ti,Mn, Ru, Co, Cr, Al, Zr, Hf, Sn, Mo, or Pd. In some embodiments, thecarbon-containing barrier layer 180 comprises TaN, and an atomic ratioof N divided by Ta is from about 2.3 to about 2.6. In some embodiments,the precursors used in ALD or CVD to form the carbon-containing barrierlayer 180 contain carbon impurities. For example, the precursors mayinclude (tert-amylimido)tris(dimethylamido)tantalum (“TAIMATA”),(tert-butylimido)tris(ethylmethylamido)tantalum(“TBTEMT”),tris(diethylamino)(tert-butylimido)tantalum (“TBTDMT”),pentakis(dimethylamino)tantalum (“PDMAT”),tetrakis(dimethylamino)titanium (“TDMAT”),bis(ethylcyclopentadienyl)Ruthenium (“Ru(EtCp)₂”),cyclopentadienyl-propylcyclopentadienylruthenium (“RuCp(i-PrCp)”),bis(methylcyclopentadienyl)ruthenium (“Ru(MeCp)₂”),tris(acetylacetonate)ruthenium (“Ru(acac)₃”), trirutheniumdodecacarbonyl (“Ru₃(CO)₁₂”), cobalt dicarbonyl cyclopentadiene(“CpCo(CO)₂”), or dicobalt hexacarbonyl tert-butylacetylene (“CCTBA”).The carbon-containing barrier layer 180 has a carbon concentration of atleast about 0.1 atomic percent (at %). In some embodiments, thecarbon-containing barrier layer 180 has a carbon concentration fromabout 0.1 at % to about 5 at %. For example, the carbon concentration isfrom 0.2 at % to 1 at %. Carbon impurities would not be found in onebarrier layer formed by a conventional approach (such as PVD orsputtering) other than ALD or CVD.

As depicted in FIG. 1 and step 370 in FIG. 3, the method 300 continueswith step 370 by forming a conductive feature 170 in the trench 192. Theconductive feature 170 may be formed by a process including, but notlimited to, ALD, CVD, PVD, sputtering, plating, or combinations thereof.The conductive feature 170 comprises Cu, Al, Ag, Au, or alloys thereof.The conductive feature 170 may also comprise one or more cap layers (notshown) having a composition of the formula MxOyNz, where M is a metal, Ois oxygen, and N is nitrogen. Generally, the metal is selected from thegroup consisting of Al, Mn, Co, Ti, Ta, W, Ni, Sn, Mg, and combinationsthereof.

As depicted in FIG. 1, in some embodiments, the method 300 furthercomprises forming an etch stop layer (ESL) 160 between the lowerdielectric layer 120 and the upper dielectric layer 190. The ESL 160 maybe formed using a suitable process such as ALD, CVD, PVD, MBE, spin-on,or combinations thereof. The material for the ESL 160 includes SiO, SiC,SiN, SiOC, SiON, SiCN, TiN, MN, AlON, TEOS, hard black diamond (HBD), orthe like. Alternatively, the ESL 160 may be formed by depositing andannealing a metal oxide material, which includes Hf, HfO₂, or Al. Insome embodiments, the ESL 160 has a thickness in a range from about 10 Åto about 300 Å. The ESL 160 is extended through by the conductivestructure 170.

The methods of the present disclosure are not limited to be used by aplanar device on the substrate and can be applied to a non-planar deviceas well, such as a fin-like field effect transistor (FinFET) or ananowire device. Based on the discussions above, it can be seen that byusing the methods of the present disclosure, diffusion of the conductivematerial (of the conductive feature) into the conductive plug is impededby forming a carbon-containing barrier layer along inner surfaces of thetrench. The thickness of the carbon-containing barrier layer issubstantially conformal along the sidewalls and the bottom surface ofthe conductive feature. Especially when a void is formed in theconductive plug, the carbon-containing barrier layer is configured tosurround and seal the void to prevent the conductive material (of theconductive feature) from filling the void. As a result, the yield andreliability of the device can be well controlled by using the methods ofthe present disclosure.

One of the broader forms of the present disclosure involves aninterconnect structure. The interconnect structure comprises aconductive plug over a substrate; a conductive feature over theconductive plug, wherein the conductive feature has a first sidewall, asecond sidewall facing the first sidewall, and a bottom surface; and acarbon-containing barrier layer having a first portion along the firstsidewall of the conductive feature, a second portion along the secondsidewall of the conductive feature, and a third portion along the bottomsurface of the conductive feature.

Another of the broader forms of the present disclosure involves aninterconnect structure. The interconnect structure comprises a tungsten(W) plug having a seam over a substrate; a copper (Cu) line over the Wplug, wherein the Cu line has a first sidewall, a second sidewall facingthe first sidewall, and a bottom surface; and a carbon-containingbarrier layer having a first portion along the first sidewall of the Culine, a second portion along the second sidewall of the Cu line, a thirdportion along the bottom surface of the Cu line, and a fourth portionsurrounding and sealing the seam, wherein the carbon-containing barrierlayer has a carbon concentration of at least about 0.1 atomic percent(at %).

Still another of the broader forms of the present disclosure involves amethod of forming an interconnect structure. The method comprisesdepositing a lower dielectric layer over a substrate; forming a plughole in the lower dielectric layer; forming a conductive plug in theplug hole; depositing an upper dielectric layer over the lowerdielectric layer; forming a trench in the upper dielectric layer and thelower dielectric layer over the conductive plug; forming acarbon-containing barrier layer along inner surfaces of the trench; andforming a conductive feature in the trench.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming an interconnect structure,the method comprising: forming a first conductive feature in a firstdielectric layer, wherein the first conductive feature comprises a firstvoid; forming a second dielectric layer over the first dielectric layer;forming a third dielectric layer over the second dielectric layer;forming a trench in the second dielectric layer and the third dielectriclayer, wherein the trench extends into the first dielectric layer,wherein the trench exposes the first void in the first conductivefeature; forming a carbon-containing barrier layer along surfaces of thetrench, wherein the carbon-containing barrier layer lines the first voidin the first conductive feature, wherein the carbon-containing barrierlayer lines the first void to form a second void; and forming aconductive layer over the carbon-containing barrier layer in the trench.2. The method of claim 1, wherein an upper surface of the firstconductive feature is recessed below the second dielectric layer.
 3. Themethod of claim 1, wherein the carbon-containing barrier layer extendscontinuously from within the second void to an upper sidewall of thethird dielectric layer.
 4. The method of claim 1, wherein the firstconductive feature comprises a barrier liner and a plug material overthe barrier liner.
 5. The method of claim 4, wherein forming the trenchcomprises recessing the barrier liner and the plug material.
 6. Themethod of claim 1, wherein the carbon-containing barrier layer has acarbon concentration of at least about 0.1 atomic percent (at %).
 7. Amethod of forming an interconnect structure, the method comprising:depositing a lower dielectric layer over a substrate; forming a firstrecess in the lower dielectric layer; forming a first conductive featurein the first recess, the first conductive feature having a first void;depositing an upper dielectric layer over the lower dielectric layer andthe first conductive feature; forming a second recess in the upperdielectric layer, wherein the second recess exposes the first conductivefeature, the second recess extending into the lower dielectric layer,wherein forming the second recess comprises removing a portion of thefirst conductive feature to expose the first void; forming acarbon-containing layer along sidewalls of the second recess and thesidewalls of the first void; and forming a second conductive layer overthe carbon-containing layer.
 8. The method of claim 7, wherein formingthe carbon-containing layer comprises using an atomic layer deposition(ALD) or a chemical vapor deposition (CVD) process.
 9. The method ofclaim 8, wherein forming the carbon-containing layer comprises using acarbon-containing precursor.
 10. The method of claim 9, where in thecarbon-containing precursor comprises(tert-amylimido)tris(dimethylamido)tantalum(“TAIMATA”),(tert-butylimido)tris(ethylmethylamido)tantalum (“TBTEMT”),tris(diethylamino)(tert-butylimido)tantalum (“TBTDMT”),pentakis(dimethylamino)tantalum (“PDMAT”),tetrakis(dimethylamino)titanium (“TDMAT”),bis(ethylcyclopentadienyl)Ruthenium (“Ru(EtCp)₂”),cyclopentadienyl-propylcyclopentadienylruthenium (“RuCp(i-PrCp)”),bis(methylcyclopentadienyl)ruthenium (“Ru(MeCp)₂”),tris(acetylacetonate)ruthenium (“Ru(acac)₃”), trirutheniumdodecacarbonyl (“Ru₃(CO)₁₂”), cobalt dicarbonyl cyclopentadiene(“CpCo(CO)₂”), or dicobalt hexacarbonyl tert-butylacetylene (“CCTBA”).11. The method of claim 9, wherein the carbon-containing layer comprisesa metal or a metal nitride.
 12. The method of claim 11, wherein themetal or metal nitride comprises one or more metal elements selectedfrom Ta, Ti, Mn, Ru, Co, Cr, Al, Zr, Hf, Sn, Mo, or Pd.
 13. The methodof claim 12, wherein the carbon-containing layer has a carbonconcentration from about 0.1 at % to about 5 at %.
 14. The method ofclaim 12, wherein the carbon-containing layer has a carbon concentrationfrom 0.2 at % to 1 at %.
 15. A method of forming an interconnectstructure, the method comprising: forming a first dielectric layer;forming a first recess in the first dielectric layer; forming a firstconductive feature in the first recess, an upper surface of the firstconductive feature being level with an upper surface of the firstdielectric layer, the first conductive feature having a first void;forming a second dielectric layer over the first dielectric layer; afterforming the second dielectric layer, forming a second recess through thesecond dielectric layer and into the first dielectric layer, whereinforming the second recess removes at least a portion of the firstconductive feature to expose the first void; forming a carbon-containingTaN layer along sidewalls of the second recess and sidewalls of thefirst void; and forming a second conductive layer over thecarbon-containing TaN layer.
 16. The method of claim 15, wherein a ratioof a sidewall thickness of the carbon-containing TaN layer to a bottomthickness of the carbon-containing TaN layer is 0.95.
 17. The method ofclaim 15, further comprising forming a cap layer over the secondconductive layer, wherein the cap layer has a composition of MxOyNz,where M is a metal, O is oxygen, and N is nitrogen.
 18. The method ofclaim 17, wherein the metal is selected from the group consistingessentially of Al, Mn, Co, Ti, Ta, W, Ni, Sn, Mg, and combinationsthereof.
 19. The method of claim 15, wherein the carbon-containing TaNlayer completely separates the second conductive layer from the seconddielectric layer and the first conductive feature.
 20. The method ofclaim 15, wherein the first conductive feature comprises a tungstenplug.